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"Improved performance of ITO/TiO2/HfO2/Pt random ..."
Tengfei Deng et al. (2016)
- Tengfei Deng, Cong Ye, Jiaji Wu, Pin He, Hao Wang:
Improved performance of ITO/TiO2/HfO2/Pt random resistive accessory memory by nitrogen annealing treatment. Microelectron. Reliab. 57: 34-38 (2016)
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