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"The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs ..."
Hsien-Chin Chiu et al. (2015)
- Hsien-Chin Chiu
, Wen-Yu Lin, W. J. Hsueh, Pei-Chin Chiu, Yue-Ming Hsin, Jen-Inn Chyi:
The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors. Microelectron. Reliab. 55(6): 890-893 (2015)
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