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"Influence of I/O oxide process on the NBTI performance of 28 nm ..."

Wei-Ting Kary Chien et al. (2016)

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DOI: 10.1016/J.MICROREL.2016.07.004

access: closed

type: Journal Article

metadata version: 2020-02-22

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Wei-Ting Kary Chien, Yueqin Zhu, Yongliang Song, Atman Yong Zhao:
Influence of I/O oxide process on the NBTI performance of 28 nm HfO₂-based HKMG p-MOSFETs. Microelectron. Reliab. 64: 220-224 (2016)

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