"Hopping conduction distance of bipolar switching GdOx resistance random ..."

Kai-Huang Chen et al. (2018)

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DOI: 10.1016/J.MICROREL.2018.05.018

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type: Journal Article

metadata version: 2020-02-22

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Kai-Huang Chen, Chien-Min Cheng, Cheng-Ying Li, Shou-Jen Huang:
Hopping conduction distance of bipolar switching GdOx resistance random access memory thin films devices modified by different constant compliance current. Microelectron. Reliab. 91: 330-334 (2018)

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