"High thermal stability and low hysteresis dispersion AlGaN/GaN MOS-HEMTs ..."

Chao-Hung Chen et al. (2012)

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DOI: 10.1016/J.MICROREL.2012.05.006

access: closed

type: Journal Article

metadata version: 2020-02-22

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Chao-Hung Chen, Hsien-Chin Chiu, Feng-Tso Chien, Hao-Wei Chuang, Kuo-Jen Chang, Yau-Tang Gau:
High thermal stability and low hysteresis dispersion AlGaN/GaN MOS-HEMTs with zirconia film design. Microelectron. Reliab. 52(11): 2551-2555 (2012)

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