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"Experimental evidence of "latent gate oxide damages" in medium voltage ..."

Giovanni Busatto et al. (2008)

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DOI: 10.1016/J.MICROREL.2008.07.030

access: closed

type: Journal Article

metadata version: 2020-02-22

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Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi:
Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure. Microelectron. Reliab. 48(8-9): 1306-1309 (2008)

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