"Study of internal behavior in a vertical DMOS transistor under short high ..."

M. Blaho et al. (2003)

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DOI: 10.1016/S0026-2714(03)00021-0

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type: Journal Article

metadata version: 2022-03-16

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M. Blaho, Dionyz Pogany, Erich Gornik, Marie Denison, Gerhard Groos, Matthias Stecher:
Study of internal behavior in a vertical DMOS transistor under short high current stress by an interferometric mapping method. Microelectron. Reliab. 43(4): 545-548 (2003)

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