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"Nanoscale and device level electrical behavior of annealed ALD Hf-based ..."

Albin Bayerl et al. (2013)

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DOI: 10.1016/J.MICROREL.2013.02.005

access: closed

type: Journal Article

metadata version: 2020-02-22

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Albin Bayerl, Mario Lanza, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich, Stefan De Gendt:
Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors. Microelectron. Reliab. 53(6): 867-871 (2013)

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