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"Improving SiC lateral DMOSFET reliability under high field stress."

Tesfaye Ayalew et al. (2003)

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DOI: 10.1016/S0026-2714(03)00321-4

access: closed

type: Journal Article

metadata version: 2020-02-22

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  - journals/mr/AyalewGPGS03
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  - https://dblp.org/rec/journals/mr/AyalewGPGS03
Tesfaye Ayalew, Andreas Gehring, Jong Mun Park, Tibor Grasser, Siegfried Selberherr:
Improving SiC lateral DMOSFET reliability under high field stress. Microelectron. Reliab. 43(9-11): 1889-1894 (2003)

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