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"n-Al0.15Ga0.85 N/p-6H-SiC heterostructure and based bipolar transistor."

Ya. I. Alivov et al. (2010)

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DOI: 10.1016/J.MICROREL.2010.06.016

access: closed

type: Journal Article

metadata version: 2020-02-22

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  - https://dblp.org/rec/journals/mr/AlivovFNCBM10
Ya. I. Alivov, Qian Fan, Xianfeng Ni, Sergey A. Chevtchenko, I. B. Bhat, Hadis Morkoç:
n-Al0.15Ga0.85 N/p-6H-SiC heterostructure and based bipolar transistor. Microelectron. Reliab. 50(12): 2090-2092 (2010)

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