Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation."

Carmine Abbate et al. (2018)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2018.07.100

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/AbbateBMSSTV18
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/AbbateBMSSTV18
Carmine Abbate, Giovanni Busatto, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi:
Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation. Microelectron. Reliab. 88-90: 941-945 (2018)

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.