"A process compatible SiC trench MOSFET integrated with double ..."

Bangmin Zhu et al. (2025)

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DOI: 10.1016/J.MEJO.2025.106702

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type: Journal Article

metadata version: 2025-05-23

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Bangmin Zhu, Jianbin Guo, Yuxing Yang, Yanghao Wang, Qingqing Sun, David Wei Zhang, Hang Xu:
A process compatible SiC trench MOSFET integrated with double p+-polySi/SiC HJD for enhanced switching performance. Microelectron. J. 161: 106702 (2025)

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