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"Design novel structure of high-voltage MOSFET with double trench gates."

Hong-Jin Yang, Tao Jin, Quanyuan Feng (2019)

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DOI: 10.1016/J.MEJO.2019.104612

access: closed

type: Journal Article

metadata version: 2020-02-22

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Hong-Jin Yang, Tao Jin, Quanyuan Feng:
Design novel structure of high-voltage MOSFET with double trench gates. Microelectron. J. 92 (2019)

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