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"Analysis of a read disturb-free 9T SRAM cell with bit-interleaving capability."

Liang Wen et al. (2014)

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DOI: 10.1016/J.MEJO.2014.02.020

access: closed

type: Journal Article

metadata version: 2020-02-22

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  - https://dblp.org/rec/journals/mj/WenDLZ14
Liang Wen, Zhikui Duan, Yi Li, Xiaoyang Zeng:
Analysis of a read disturb-free 9T SRAM cell with bit-interleaving capability. Microelectron. J. 45(6): 815-824 (2014)

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