"A deep trench-type SiC MOSFET integrated with Schottky diode for enhanced ..."

Liang Tian, Qingchun Zhang (2025)

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DOI: 10.1016/J.MEJO.2025.106639

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type: Journal Article

metadata version: 2025-04-29

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Liang Tian, Qingchun Zhang:
A deep trench-type SiC MOSFET integrated with Schottky diode for enhanced oxide reliability and switching performances. Microelectron. J. 159: 106639 (2025)

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