"A physics-based drain current model for Si1-xGex ..."

Anchal Thakur, Rohit Dhiman (2022)

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DOI: 10.1016/J.MEJO.2022.105501

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type: Journal Article

metadata version: 2022-08-25

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Anchal Thakur, Rohit Dhiman:
A physics-based drain current model for Si_1-xGe_x source/drain NT JLFET for enhanced hot carrier reliability with temperature measurement. Microelectron. J. 126: 105501 (2022)

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