"P-type trench gate based drain-extended N-type MOS design for high ..."

Shraddha Pali, Nitish Kumar, Ankur Gupta (2023)

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DOI: 10.1016/J.MEJO.2023.105894

access: closed

type: Journal Article

metadata version: 2023-11-12

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Shraddha Pali, Nitish Kumar, Ankur Gupta:
P-type trench gate based drain-extended N-type MOS design for high unclamped inductive switching reliability. Microelectron. J. 139: 105894 (2023)

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