"Single-event burnout hardening in p-GaN HEMTs: An embedded ..."

Xingyu Luo et al. (2025)

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DOI: 10.1016/J.MEJO.2025.106842

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type: Journal Article

metadata version: 2025-09-21

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Xingyu Luo, Yanjun Wu, Yang Zuo, Sheng Gao:
Single-event burnout hardening in p-GaN HEMTs: An embedded polarization-modulated composite barrier layer approach. Microelectron. J. 165: 106842 (2025)

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