"A physical model for dual gate a-InGaZnO thin film transistors based on ..."

Linan Li et al. (2019)

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DOI: 10.1016/J.MEJO.2019.02.002

access: closed

type: Journal Article

metadata version: 2020-02-22

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Linan Li, Wenqiang Ba, Wei Wang, Ling Li, Guangwei Xu, Lingfei Wang, Zhuoyu Ji, Congyan Lu, Writam Banerjee:
A physical model for dual gate a-InGaZnO thin film transistors based on multiple trapping and release mechanism. Microelectron. J. 86: 1-6 (2019)

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