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"Impact of band gap and gate dielectric engineering on novel ..."

Kaushal Kumar, Subhash Chander Sharma (2022)

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DOI: 10.1016/J.MEJO.2022.105610

access: closed

type: Journal Article

metadata version: 2023-01-15

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Kaushal Kumar, Subhash Chander Sharma:
Impact of band gap and gate dielectric engineering on novel Si_0.1Ge_0.9-GaAs lateral N-type charge plasma based JLTFET. Microelectron. J. 130: 105610 (2022)

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