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"The influence of high-k passivation layer on breakdown voltage of Schottky ..."

Binola K. Jebalin et al. (2015)

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DOI: 10.1016/J.MEJO.2015.04.006

access: closed

type: Journal Article

metadata version: 2020-10-26

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  - https://dblp.org/rec/journals/mj/JebalinRPMN15
Binola K. Jebalin, A. Shobha Rekh, P. Prajoon, N. Mohankumar, D. Nirmal:
The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs. Microelectron. J. 46(12): 1387-1391 (2015)

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