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"Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the ..."

Binola K. Jebalin et al. (2024)

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DOI: 10.1016/J.MEJO.2024.106158

access: closed

type: Journal Article

metadata version: 2024-05-31

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Binola K. Jebalin, S. Angen Franklin, G. Gifta, P. Prajoon, D. Nirmal:
Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone. Microelectron. J. 147: 106158 (2024)

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