"Physics-based numerical simulation and device characterizations of ..."

Hasina F. Huq, Bashirul Polash (2011)

> Home

Details and statistics

DOI: 10.1016/J.MEJO.2011.02.003

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mj/HuqP11
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mj/HuqP11
Hasina F. Huq, Bashirul Polash:
Physics-based numerical simulation and device characterizations of AlGaN/GaN HEMTs with temperature effects. Microelectron. J. 42(6): 923-928 (2011)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.