"Czochralski-grown nitrogen-doped silicon: Electrical properties of MOS ..."

L. Harmatha et al. (2006)

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DOI: 10.1016/J.MEJO.2005.04.059

access: closed

type: Journal Article

metadata version: 2020-02-22

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L. Harmatha, Milan Tapajna, V. Slugen, P. Ballo, P. Písecný, J. Sik, G. Kögel:
Czochralski-grown nitrogen-doped silicon: Electrical properties of MOS structures; A positron annihilation study. Microelectron. J. 37(4): 283-289 (2006)

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