"An improved 4H-SiC trench MOS barrier Schottky diode with current ..."

Haitao Ge et al. (2024)

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DOI: 10.1016/J.MEJO.2024.106451

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type: Journal Article

metadata version: 2024-11-30

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Haitao Ge, Wang-zi-xuan Zhen, Cheng-hao Yu, Masayuki Yamamoto, Wen-Sheng Zhao, Haoming Guo, Xiao-dong Wu:
An improved 4H-SiC trench MOS barrier Schottky diode with current spreading layer and low resistance layer. Microelectron. J. 154: 106451 (2024)

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