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"Nanosheet FET: A new subthreshold current model caused by ..."

Te-Kuang Chiang (2020)

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DOI: 10.1016/J.MEJO.2020.104893

access: closed

type: Journal Article

metadata version: 2020-10-15

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Te-Kuang Chiang:
Nanosheet FET: A new subthreshold current model caused by interface-trapped-charge and its application for evaluation of subthreshold logic gate. Microelectron. J. 104: 104893 (2020)

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