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"A 40-nm 118.44-TOPS/W Voltage-Sensing Compute-in-Memory RRAM Macro With ..."

Jong-Hyeok Yoon et al. (2022)

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DOI: 10.1109/JSSC.2022.3141370

access: closed

type: Journal Article

metadata version: 2022-03-15

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Jong-Hyeok Yoon, Muya Chang, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury:
A 40-nm 118.44-TOPS/W Voltage-Sensing Compute-in-Memory RRAM Macro With Write Verification and Multi-Bit Encoding. IEEE J. Solid State Circuits 57(3): 845-857 (2022)

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