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"CMOS voltage reference based on gate work function differences in poly-Si ..."

Hirobumi Watanabe et al. (2003)

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DOI: 10.1109/JSSC.2003.811974

access: closed

type: Journal Article

metadata version: 2022-04-25

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Hirobumi Watanabe, Shunsuke Ando, Hideyuki Aota, Masanori Dainin, Yong-Jin Chun, Kenji Taniguchi:
CMOS voltage reference based on gate work function differences in poly-Si controlled by conductivity type and impurity concentration. IEEE J. Solid State Circuits 38(6): 987-994 (2003)

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