"A 256 kb 65 nm 8T Subthreshold SRAM Employing Sense-Amplifier Redundancy."

Naveen Verma, Anantha P. Chandrakasan (2008)

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DOI: 10.1109/JSSC.2007.908005

access: closed

type: Journal Article

metadata version: 2020-08-30

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Naveen Verma, Anantha P. Chandrakasan:
A 256 kb 65 nm 8T Subthreshold SRAM Employing Sense-Amplifier Redundancy. IEEE J. Solid State Circuits 43(1): 141-149 (2008)

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