"2.45 e-RMS Low-Random-Noise, 598.5 mW Low-Power, and 1.2 kfps High-Speed ..."

Min-Woong Seo et al. (2022)

> Home

Details and statistics

DOI: 10.1109/JSSC.2022.3142436

access: closed

type: Journal Article

metadata version: 2023-03-16

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/jssc/SeoCJKSBLLKLKLS22
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/jssc/SeoCJKSBLLKLKLS22
Min-Woong Seo, Myunglae Chu, Hyun-Yong Jung, Suksan Kim, Jiyoun Song, Daehee Bae, Sanggwon Lee, Junan Lee, Sung-Yong Kim, Jongyeon Lee, Minkyung Kim, Gwi-Deok Lee, Heesung Shim, Changyong Um, Changhwa Kim, In-Gyu Baek, Doowon Kwon, Hongki Kim, Hyuksoon Choi, Jonghyun Go, JungChak Ahn, Jaekyu Lee, Chang-Rok Moon, Kyupil Lee, Hyoung-Sub Kim:
2.45 e-RMS Low-Random-Noise, 598.5 mW Low-Power, and 1.2 kfps High-Speed 2-Mp Global Shutter CMOS Image Sensor With Pixel-Level ADC and Memory. IEEE J. Solid State Circuits 57(4): 1125-1137 (2022)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.