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"A 0.2 V, 480 kb Subthreshold SRAM With 1 k Cells Per Bitline for ..."
Tony Tae-Hyoung Kim et al. (2008)
- Tony Tae-Hyoung Kim, Jason Liu, John Keane, Chris H. Kim:
A 0.2 V, 480 kb Subthreshold SRAM With 1 k Cells Per Bitline for Ultra-Low-Voltage Computing. IEEE J. Solid State Circuits 43(2): 518-529 (2008)
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