Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory."

Chulbum Kim et al. (2018)

> Home

Details and statistics

DOI: 10.1109/JSSC.2017.2731813

access: closed

type: Journal Article

metadata version: 2020-08-30

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/jssc/KimKJKPPLPALKYY18
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/jssc/KimKJKPPLPALKYY18
Chulbum Kim, Doo-Hyun Kim, Woopyo Jeong, Hyun-Jin Kim, Il-Han Park, Hyun Wook Park, Jong-Hoon Lee, Jiyoon Park, Yang-Lo Ahn, Ji Young Lee, Seungbum Kim, Hyun-Jun Yoon, Jaedoeg Yu, Nayoung Choi, Nahyun Kim, Hwajun Jang, Jonghoon Park, Seunghwan Song, Yongha Park, Jinbae Bang, Sanggi Hong, Youngdon Choi, Moosung Kim, Hyunggon Kim, Pansuk Kwak, Jeong-Don Ihm, Dae-Seok Byeon, Jin-Yub Lee, Ki-Tae Park, Kyehyun Kyung:
A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory. IEEE J. Solid State Circuits 53(1): 124-133 (2018)

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.