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"A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with ..."

Gitae Jeong et al. (2003)

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DOI: 10.1109/JSSC.2003.818145

access: closed

type: Journal Article

metadata version: 2022-04-20

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Gitae Jeong, Wooyoung Cho, Sujin Ahn, Hongsik Jeong, Gwanhyeob Koh, Youngnam Hwang, Kinam Kim:
A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme. IEEE J. Solid State Circuits 38(11): 1906-1910 (2003)

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