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"A 0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed ..."

Byung-Gil Jeon et al. (2000)

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DOI: 10.1109/4.881216

access: closed

type: Journal Article

metadata version: 2022-04-13

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Byung-Gil Jeon, Mun-Kyu Choi, Yoonjong Song, Seung-Kyu Oh, Yeonbae Chung, Kang-Deog Suh, Kinam Kim:
A 0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit. IEEE J. Solid State Circuits 35(11): 1690-1694 (2000)

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