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"A 23.6-Mb/mm $^{2}$ SRAM in 10-nm FinFET Technology With Pulsed-pMOS TVC ..."

Zheng Guo et al. (2019)

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DOI: 10.1109/JSSC.2018.2861873

access: closed

type: Journal Article

metadata version: 2020-08-30

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Zheng Guo, Daeyeon Kim, Satyanand Nalam, Jami Wiedemer, Xiaofei Wang, Eric Karl:
A 23.6-Mb/mm $^{2}$ SRAM in 10-nm FinFET Technology With Pulsed-pMOS TVC and Stepped-WL for Low-Voltage Applications. IEEE J. Solid State Circuits 54(1): 210-216 (2019)

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