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"A 3.3-V, 4-Mb nonvolatile ferroelectric RAM with selectively driven ..."

Yeonbae Chung, Byung-Gil Jeon, Kang-Deog Suh (2000)

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DOI: 10.1109/4.841494

access: closed

type: Journal Article

metadata version: 2022-04-08

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Yeonbae Chung, Byung-Gil Jeon, Kang-Deog Suh:
A 3.3-V, 4-Mb nonvolatile ferroelectric RAM with selectively driven double-pulsed plate read/write-back scheme. IEEE J. Solid State Circuits 35(5): 697-704 (2000)

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