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"A Fully Integrated 160-Gb/s D-Band Transmitter Achieving 1.1-pJ/b ..."

Steven Callender et al. (2022)

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DOI: 10.1109/JSSC.2022.3208510

access: closed

type: Journal Article

metadata version: 2022-12-05

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Steven Callender, Abhishek Agrawal, Amy Whitcombe, Ritesh Bhat, Mustafijur Rahman, Chun C. Lee, Peter Sagazio, Georgios C. Dogiamis, Brent R. Carlton, Christopher D. Hull, Stefano Pellerano:
A Fully Integrated 160-Gb/s D-Band Transmitter Achieving 1.1-pJ/b Efficiency in 22-nm FinFET. IEEE J. Solid State Circuits 57(12): 3582-3598 (2022)

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