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"A robust 8F2 ferroelectric RAM cell with depletion device ..."

Georg Braun et al. (2000)

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DOI: 10.1109/4.841493

access: closed

type: Journal Article

metadata version: 2022-04-13

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Georg Braun, Heinz Hoenigschmid, Tobias Schlager, Werner Weber:
A robust 8F² ferroelectric RAM cell with depletion device (DeFeRAM). IEEE J. Solid State Circuits 35(5): 691-696 (2000)

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