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"Etch Rate of Oxide Grown on Silicon Implanted with Different Ion ..."

Yang-Hee Joung, Seong-Jun Kang (2003)

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DOI: —

access: open

type: Journal Article

metadata version: 2021-02-16

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  - electronic edition @ or.kr (open access)
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  dblp key:
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  - https://dblp.org/rec/journals/jicce/JoungK03
Yang-Hee Joung, Seong-Jun Kang:
Etch Rate of Oxide Grown on Silicon Implanted with Different Ion Implantation Conditions prior to Oxidation. J. Inform. and Commun. Convergence Engineering 1(2): 67-69 (2003)

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