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"Improved Read/Write Stability-Based Level Shift 5T Ternary SRAM Cell ..."

Gopavaram Suneel Kumar, Gannera Mamatha (2023)

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DOI: 10.1142/S0218126623500032

access: closed

type: Journal Article

metadata version: 2023-04-29

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Gopavaram Suneel Kumar, Gannera Mamatha:
Improved Read/Write Stability-Based Level Shift 5T Ternary SRAM Cell Design Using Enhanced Gate Diffusion Input BWGCNTFET. J. Circuits Syst. Comput. 32(1): 2350003:1-2350003:21 (2023)

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