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"2D semiconductor device simulations by WENO-Boltzmann schemes: Efficiency, ..."

José A. Carrillo et al. (2006)

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DOI: 10.1016/J.JCP.2005.09.005

access: closed

type: Journal Article

metadata version: 2024-02-05

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José A. Carrillo, Irene M. Gamba, Armando Majorana, Chi-Wang Shu:
2D semiconductor device simulations by WENO-Boltzmann schemes: Efficiency, boundary conditions and comparison to Monte Carlo methods. J. Comput. Phys. 214(1): 55-80 (2006)

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