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"A low-leakage single-bitline 9T SRAM cell with read-disturbance removal ..."
Erfan Abbasian, Morteza Gholipour (2022)
- Erfan Abbasian, Morteza Gholipour:
A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applications. Int. J. Circuit Theory Appl. 50(5): 1537-1556 (2022)
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