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"Numerical simulation and parametric assessment of GaN buffered trench gate ..."

Pranav M. Tripathi et al. (2020)

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DOI: 10.1049/IET-CDS.2020.0041

access: closed

type: Journal Article

metadata version: 2021-04-09

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  - https://dblp.org/rec/journals/iet-cds/TripathiSCK20
Pranav M. Tripathi, Harshit Soni, Rishu Chaujar, Ajay Kumar:
Numerical simulation and parametric assessment of GaN buffered trench gate MOSFET for low power applications. IET Circuits Devices Syst. 14(6): 915-922 (2020)

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