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"500 V breakdown voltage in β-Ga2O3 ..."
Nesa Abedi Rik, Ali A. Orouji, Dariush Madadi (2023)
- Nesa Abedi Rik, Ali A. Orouji, Dariush Madadi:
500 V breakdown voltage in β-Ga2O3 laterally diffused metal-oxide-semiconductor field-effect transistor with 108 MW/cm2 power figure of merit. IET Circuits Devices Syst. 17(4): 199-204 (2023)
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