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"Internal write-back and read-before-write schemes to eliminate the ..."

Ghasem Pasandi, Massoud Pedram (2018)

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DOI: 10.1049/IET-CDS.2017.0227

access: closed

type: Journal Article

metadata version: 2020-12-29

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Ghasem Pasandi, Massoud Pedram:
Internal write-back and read-before-write schemes to eliminate the disturbance to the half-selected cells in SRAMs. IET Circuits Devices Syst. 12(4): 460-466 (2018)

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