"Internal write-back and read-before-write schemes to eliminate the ..."

Ghasem Pasandi, Massoud Pedram (2018)

> Home

Details and statistics

DOI: 10.1049/IET-CDS.2017.0227

access: closed

type: Journal Article

metadata version: 2020-12-29

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/iet-cds/PasandiP18
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/iet-cds/PasandiP18
Ghasem Pasandi, Massoud Pedram:
Internal write-back and read-before-write schemes to eliminate the disturbance to the half-selected cells in SRAMs. IET Circuits Devices Syst. 12(4): 460-466 (2018)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.