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"Suppression of ambipolarity in tunnel-FETs using gate oxide as parameter: ..."

Syed Afzal Ahmad, Naushad Alam (2020)

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DOI: 10.1049/IET-CDS.2019.0053

access: closed

type: Journal Article

metadata version: 2020-12-31

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Syed Afzal Ahmad, Naushad Alam:
Suppression of ambipolarity in tunnel-FETs using gate oxide as parameter: analysis and investigation. IET Circuits Devices Syst. 14(3): 288-293 (2020)

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