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"MFSFET with 5nm Thick Ferroelectric Nondoped HfO2 Gate ..."

Joong-Won Shin, Masakazu Tanuma, Shun'ichiro Ohmi (2022)

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DOI: 10.1587/TRANSELE.2021FUP0003

access: closed

type: Journal Article

metadata version: 2023-05-12

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Joong-Won Shin, Masakazu Tanuma, Shun'ichiro Ohmi:
MFSFET with 5nm Thick Ferroelectric Nondoped HfO₂ Gate Insulator Utilizing Low Power Sputtering for Pt Gate Electrode Deposition. IEICE Trans. Electron. 105-C(10): 578-583 (2022)

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