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"Single-Electron Transistor Operation of a Physically Defined Silicon ..."

Shimpei Nishiyama et al. (2023)

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DOI: 10.1587/TRANSELE.2022FUS0002

access: closed

type: Journal Article

metadata version: 2023-10-23

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  - https://dblp.org/rec/journals/ieicetc/NishiyamaKLMYKM23
Shimpei Nishiyama, Kimihiko Kato, Yongxun Liu, Raisei Mizokuchi, Jun Yoneda, Tetsuo Kodera, Takahiro Mori:
Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist. IEICE Trans. Electron. 106(10): 592-596 (2023)

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