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"Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin ..."

Yasuyuki Miyamoto, Takahiro Gotow (2020)

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DOI: 10.1587/TRANSELE.2019FUS0002

access: closed

type: Journal Article

metadata version: 2021-01-18

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  dblp key:
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  persistent URL:
  - https://dblp.org/rec/journals/ieicetc/MiyamotoG20
Yasuyuki Miyamoto, Takahiro Gotow:
Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer. IEICE Trans. Electron. 103-C(6): 304-307 (2020)

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