"A 40-nm 0.5-V 12.9-pJ/Access 8T SRAM Using Low-Energy Disturb Mitigation ..."

Shusuke Yoshimoto et al. (2012)

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DOI: 10.1587/TRANSELE.E95.C.572

access: closed

type: Journal Article

metadata version: 2024-05-07

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Shusuke Yoshimoto, Masaharu Terada, Shunsuke Okumura, Toshikazu Suzuki, Shinji Miyano, Hiroshi Kawaguchi, Masahiko Yoshimoto:
A 40-nm 0.5-V 12.9-pJ/Access 8T SRAM Using Low-Energy Disturb Mitigation Scheme. IEICE Trans. Electron. 95-C(4): 572-578 (2012)

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